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Efficient Quantum-Mechanical Modeling of Nonradiative Charge Transfer Processes
Alexander Karl, Dominic Waldhoer, Theresia Knobloch +2
Nonradiative charge transfer processes play a central role in a wide range of physical phenomena, including reliability phenomena in semiconductor devices such as bias temperature…
Performance and reliability potential of BiOSe/BiSeO transistors
Mohammad Rasool Davoudi, Mina Bahrami, Axel Verdianu +16
While 2D materials have enormous potential for future device technologies, many challenges must be overcome before they can be deployed at an industrial scale. One of these challen…
Accurate Modeling of Gate Leakage Currents in SiC Power MOSFETs
Ang Feng, Alexander Karl, Dominic Waldhör +3
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer fr…