68 citations · 107 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2005
From wave-functions to current-voltage characteristics: overview of a Coulomb blockade device simulator using fundamental physical parameters
Johann Sée, Philippe Dollfus, Sylvie Galdin +1
The purpose of this article is to present an accurate way, based on a physical description, to simulate Coulomb blockade devices. The method underlying the simulations depends only…
cond-mat.mes-hall2005★ 39 cited
Scaling Law in Carbon Nanotube Electromechanical Devices
R. Lefevre, M. F. Goffman, V. Derycke +4
We report a method for probing electromechanical properties of multiwalled carbon nanotubes(CNTs). This method is based on AFM measurements on a doubly clamped suspended CNT electr…
cond-mat.mes-hall2003★ 68 cited
Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation
P. Dollfus, A. Bournel, S. Galdin +2
This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFET. In this purpose, a careful description of elect…