68 citations · 75 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2008★ 7 cited
A Pearson Effective Potential for Monte-Carlo simulation of quantum confinement effects in various MOSFET architectures
M. -A. Jaud, S. Barraud, P. Dollfus +1
A Pearson Effective Potential model for including quantization effects in the simulation of nanoscale nMOSFETs has been developed. This model, based on a realistic description of t…
cond-mat.mes-hall2003★ 68 cited
Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation
P. Dollfus, A. Bournel, S. Galdin +2
This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFET. In this purpose, a careful description of elect…