2 papers
cond-mat.mtrl-sci2024
Structure evolution path of ferroelectric hafnium zirconium oxide nanocrystals under in-situ biasing
Yunzhe Zheng, Heng Yu, Tianjiao Xin +8
Fluorite-type -based ferroelectric (FE) oxides have rekindled interest in FE memories due to their compatibility with silicon processing and potential for high-dens…
physics.app-ph2023
Landauer-QFLPS model for mixed Schottky-Ohmic contact two-dimensional transistors
Zhao-Yi Yan, Zhan Hou, Kan-Hao Xue +16
Two-dimensional material-based field effect transistors (2DM-FETs) are playing a revolutionary role in electronic devices. However, after years of development, no device model can…