1 citations · 1 across the 4 of their papers we have counts for
4 papers · 1 filter
Over One Order of Magnitude Enhancement in Hole Mobility of 2D III-V Semiconductors through Valence Band Edge Shift
Jianshi Sun, Shouhang Li, Cheng Shao +6
Two-dimensional (2D) semiconductors show great potential to sustain Moore's law in the era of ultra-scaled electronics. However, their scalable applications are severely constraine…
Giant enhancement of hole mobility for 4H-silicon carbide through suppressing interband electron-phonon scattering
Jianshi Sun, Shouhang Li, Zhen Tong +8
4H-Silicon Carbide (4H-SiC) possesses a high Baliga figure of merit, making it a promising material for power electronics. However, its applications are limited by its low hole mob…
Diverse Responses in Lattice Thermal Conductivity of -type/-type Semiconductors Driven by Asymmetric Electron-Phonon Interactions
Jianshi Sun, Shouhang Li, Zhen Tong +8
Accurately assessing the impact of electron-phonon interaction (EPI) on the lattice thermal conductivity of semiconductors is crucial for the thermal management of electronic devic…
Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations
Jianshi Sun, Shouhang Li, Zhen Tong +6
Wurtzite gallium nitride (GaN) has great potential for high-frequency and high-power applications due to its excellent electrical and thermal transport properties. However, enhanci…