98 citations · 170 across the 7 of their papers we have counts for
7 papers
A TEM study of Si-SiO2 interfaces in silicon nanodevices
Paul Spizzirri, Sergey Rubanov, Eric Gauja +3
The fabrication of micro- and nano-scale silicon electronic devices requires precision lithography and controlled processing to ensure that the electronic properties of the device…
Spin-Dependent Quasiparticle Transport in Aluminum Single Electron Transistors
A. J. Ferguson, S. E. Andresen, R. Brenner +1
We investigate the effect of Zeeman-splitting on quasiparticle transport in normal-superconducting-normal (NSN) aluminum single electron transistors (SETs). In the above-gap transp…
Radio-frequency operation of a double-island single-electron transistor
R. Brenner, T. M. Buehler, D. J. Reilly
We present results on a double-island single-electron transistor (DISET) operated at radio-frequency (rf) for fast and highly sensitive detection of charge motion in the solid stat…
Current suppression in a double-island single-electron transistor for detection of degenerate charge configurations of a floating double-dot
R. Brenner, Andrew D. Greentree, A. R. Hamilton
We have investigated a double-island single-electron transistor (DISET) coupled to a floating metal double-dot (DD). Low-temperature transport measurements were used to map out the…
Self-aligned fabrication process for silicon quantum computer devices
T. M. Buehler, R. P. McKinnon, N. E. Lumpkin +6
We describe a fabrication process for devices with few quantum bits (qubits), which are suitable for proof-of-principle demonstrations of silicon-based quantum computation. The dev…
Encapsulation of phosphorus dopants in silicon for the fabrication of a quantum computer
L. Oberbeck, N. J. Curson, M. Y. Simmons +4
The incorporation of phosphorus in silicon is studied by analyzing phosphorus delta-doped layers using a combination of scanning tunneling microscopy, secondary ion mass spectromet…