57 citations · 157 across the 8 of their papers we have counts for
9 papers
Thermal Stability of Hafnium Zirconium Oxide on Transition Metal Dichalcogenides
Maria Gabriela Sales, Samantha T. Jaszewski, Shelby S. Fields +2
Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a promising route toward ferroelectric-based devices due to lack of dangling bonds on the TMDC s…
Growth kinetics and atomistic mechanisms of native oxidation of ZrSSe and MoS crystals
Seong Soon Jo, Akshay Singh, Liqiu Yang +14
A thorough understanding of native oxides is essential for designing semiconductor devices. Here we report a study of the rate and mechanisms of spontaneous oxidation of bulk singl…
MoS2 Impurities: Chemical Identification and Spatial Resolution of Bismuth Impurities in Geological Material
Maria Gabriela Sales, Lucas Herweyer, Elizabeth Opila +1
Molybdenum disulfide (MoS2) is the most widely studied transition metal dichalcogenide (TMDC) material, in part because it is a natural crystal present in the earth, thus making it…
Titanium Contacts to MoS2 with Interfacial Oxide: Interface Chemistry and Thermal Transport
Keren M. Freedy, David H. Olson, Patrick E. Hopkins +1
The deposition of a thin oxide layer at metal/semiconductor interfaces has been previously reported as a means of reducing contact resistance in 2D electronics. Using X-ray photoel…
Titanium Contacts to Graphene: Process-Induced Variability in Electronic and Thermal Transport
Keren M. Freedy, Ashutosh Giri, Brian M. Foley +3
Contact Resistance (RC) is a major limiting factor in the performance of graphene devices. RC is sensitive to the quality of the interface and the composition of the contact, which…
MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates
Suresh Vishwanath, Aditya Sundar, Xinyu Liu +17
MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic…