95 citations · 285 across the 8 of their papers we have counts for
8 papers
Energetics and electronic structure of native point defects in -Ga2O3
Takuma Kobayashi, Tomoya Gake, Yu Kumagai +2
We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects (Ga and O vacancies, interstitials, and a Ga vacanc…
Anomalous conduction band fluctuation in silicon carbide metal-oxide-semiconductor structures revealed by electrical characterization of field effect transistors combined with self-consistent numerical calculations
Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto
We determined the interface state density () distributions in the vicinity of the conduction band edge in silicon carbide (SiC) metal-oxide-semiconductor (MOS) structur…
Influence of vacuum annealing on interface properties of SiC (0001) MOS structures
Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto
We investigated the influence of vacuum annealing on interface properties of silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures. For as-oxidized and nitric oxide (NO)…
Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing
Takuma Kobayashi, Keita Tachiki, Koji Ito +1
We report that annealing in low-oxygen-partial-pressure (low-p) ambient is effective in reducing the interface state density (D) at a SiC (0001)/SiO…
Native point defects and carbon clusters in 4H-SiC: A hybrid functional study
Takuma Kobayashi, Kou Harada, Yu Kumagai +2
We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects and carbon clusters in the 4H polytype of silicon c…
Structure and energetics of carbon-related defects in SiC (0001)/SiO systems revealed by first-principles calculations: Defects in SiC, SiO, and just at their interface
Takuma Kobayashi, Yu-ichiro Matsushita
We report first-principles calculations that reveal the atomic forms, stability, and energy levels of carbon-related defects in SiC (0001)/SiO systems. We clarify the sta…
Carbon Ejection from a SiO2/SiC(0001) Interface by Annealing in High-Purity Ar
Takuma Kobayashi, Tsunenobu Kimoto
We found that carbon-associated byproducts formed at the dry-oxidized SiO2/SiC(0001) interface could be decomposed and be taken out to the SiO2 side by high-purity Ar annealing. We…
Microscopic Mechanism of Carbon Annihilation upon SiC Oxidation due to Phosphorous Treatment: Density-Functional Calculations Combined with Ion Mass Spectrometry
Takuma Kobayashi, Yu-ichiro Matsushita, Takafumi Okuda +2
We report first-principles static and dynamic calculations that clarify the microscopic mechanism of carbon annihilation due to phosphorous treatment upon oxidation of silicon carb…