Takuma Kobayashi

most citedNative point defects and carbon clusters in 4H-SiC: A hybrid functional study

95 citations · 116 across the 2 of their papers we have counts for

collaborators

7 papers

cond-mat.mtrl-sci2019

Energetics and electronic structure of native point defects in $α$ -Ga2O3

Takuma Kobayashi, Tomoya Gake, Yu Kumagai +2

We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects (Ga and O vacancies, interstitials, and a Ga vacanc…

cond-mat.mtrl-sci2019

Anomalous conduction band fluctuation in silicon carbide metal-oxide-semiconductor structures revealed by electrical characterization of field effect transistors combined with self-consistent numerical calculations

Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto

We determined the interface state density ( $D_{it}$ ) distributions in the vicinity of the conduction band edge in silicon carbide (SiC) metal-oxide-semiconductor (MOS) structur…

cond-mat.mtrl-sci2019

Influence of vacuum annealing on interface properties of SiC (0001) MOS structures

Koji Ito, Takuma Kobayashi, Tsunenobu Kimoto

We investigated the influence of vacuum annealing on interface properties of silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures. For as-oxidized and nitric oxide (NO)…

cond-mat.mtrl-sci2019★ 21 cited

Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing

Takuma Kobayashi, Keita Tachiki, Koji Ito +1

We report that annealing in low-oxygen-partial-pressure (low-p $_{O2}$ ) ambient is effective in reducing the interface state density (D $_{IT}$ ) at a SiC (0001)/SiO $_{2}$ …

cond-mat.mtrl-sci2019★ 95 cited

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study

Takuma Kobayashi, Kou Harada, Yu Kumagai +2

We report first-principles calculations that clarify the formation energies and charge transition levels of native point defects and carbon clusters in the 4H polytype of silicon c…

cond-mat.mtrl-sci2019

Structure and energetics of carbon-related defects in SiC (0001)/SiO $_{2}$ systems revealed by first-principles calculations: Defects in SiC, SiO $_{2}$ , and just at their interface

Takuma Kobayashi, Yu-ichiro Matsushita

We report first-principles calculations that reveal the atomic forms, stability, and energy levels of carbon-related defects in SiC (0001)/SiO $_{2}$ systems. We clarify the sta…

Energetics and electronic structure of native point defects in α-Ga2O3

Anomalous conduction band fluctuation in silicon carbide metal-oxide-semiconductor structures revealed by electrical characterization of field effect transistors combined with self-consistent numerical calculations

Influence of vacuum annealing on interface properties of SiC (0001) MOS structures

Reduction of interface state density in SiC (0001) MOS structures by low-oxygen-partial-pressure annealing

Native point defects and carbon clusters in 4H-SiC: A hybrid functional study

Structure and energetics of carbon-related defects in SiC (0001)/SiO2​ systems revealed by first-principles calculations: Defects in SiC, SiO2​, and just at their interface

Energetics and electronic structure of native point defects in $α$ -Ga2O3

Structure and energetics of carbon-related defects in SiC (0001)/SiO $_{2}$ systems revealed by first-principles calculations: Defects in SiC, SiO $_{2}$ , and just at their interface