Transport properties of band engineered p-n heterostructures of epitaxial Bi${}_2$Se${}_3$/(Bi${}_{1-x}$Sb${}_x$)${}_2$(Te${}_{1-y}$Se${}_y$)${}_3$ topological insulators

T. Mayer, H. Werner, F. Schmid +6

The challenge of parasitic bulk doping in Bi-based 3D topological insulator materials is still omnipresent, especially when preparing samples by molecular beam epitaxy (MBE). Here,…