most citedCoherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

19 citations · 19 across the 1 of their papers we have counts for

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1 paper

cond-mat.mes-hall2017★ 19 cited

Coherent tunneling in an AlGaN/AlN/GaN heterojunction captured through an analogy with a MOS contact

Yannick Baines, Julien Buckley, Jérôme Biscarrat +5

Due to their wide band gaps, III-N materials can exhibit behaviors ranging from the semiconductor class to the dielectric class. Through an analogy between a Metal/AlGaN/AlN/GaN di…