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cond-mat.mes-hall2018
Comprehensive numerical modeling of filamentary RRAM devices including voltage ramp-rate and cycle-to-cycle variations
Dipesh Niraula, Victor Karpov
The equilibrium ON and OFF states of resistive random access memory (RRAM) are due to formation and destruction of a conducting filament. The laws of thermodynamics dictate that th…
cond-mat.mes-hall2018
Field induced nucleation in nano-structures
V. G. Karpov, Dipesh Niraula
We predict the probability of field induced nucleation (FIN) of conductive filaments across the nano-thin dielectric layers in memory and switching devices. The novelty of our anal…