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F. Shahedipour-Sandvik

3 papers hereh-index 191.2k citations124 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author2

Across the 2 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci2
  • physics.acc-ph1
same name
  • F. Shahedipour-Sandvik — 1 paper, h 3

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedMOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density

24 citations · 24 across the 1 of their papers we have counts for

collaborators

3 papers

physics.acc-ph2021

Photoemission characterization of N-polar III-Nitride photocathodes as bright electron beam source for accelerator applications

L. Cultrera, E. Rocco, F. Shahedipour-Sandvik +6

We report on the growth and characterization of a new class of photocathode structures for application as electron sources to produce high brightness electron beams for accelerator…

cond-mat.mtrl-sci2021

Dopant-defect interactions and their impact on local crystal stoichiometry studies in Mg-doped GaN via atom probe tomography

Olivia Grace Licata, Scott Broderick, Emma Rocco +2

In this work, doping-defect interactions relevant to self-compensation in p-type GaN were investigated using atom probe tomography. The 3D visualization of ion distribution reveale…

cond-mat.mtrl-sci2017★ 24 cited

MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density

Jonathan Marini, Jeffrey Leathersich, Isra Mahaboob +4

We report on the impact of growth conditions on surface hillock density of N-polar GaN grown on nominally on-axis (0001) sapphire substrate by metal organic chemical vapor depositi…

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