most citedZnO and ZnO based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior

70 citations · 70 across the 1 of their papers we have counts for

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physics.app-ph2017★ 70 cited

ZnO and ZnO based thin film memristors: The effects of oxygen deficiency and thickness in resistive switching behavior

Fatih Gul, Hasan Efeoglu

In this study, direct-current reactive sputtered ZnO and ZnO1-x based thin film (30 nm and 300 nm in thickness) memristor devices were produced and the effects of oxygen vacancies…