5 papers · 1 filter
The RD50-MPW4: A Radiation Hard HV CMOS Sensor for Future Colliders
Jory Sonneveld, Thomas Bergauer, Raimon Casanova +17
The former CERN RD50 collaboration develops monolithic active pixel high voltage (HV) CMOS sensors for future colliders with the aim of high radiation tolerance, good time resoluti…
TPA-TCT analysis of the RD50-MPW4 monolithic pixel particle detector
Francisco Rogelio Palomo, Jorge Jiménez-Sánchez, Jorge Jiménez-Sánchez +12
The RD50-MPW4, a Depleted Monolithic Active Pixel Sensor (DMAPS) was analyzed using a Two Photon Absorption Transient Current Technique (TPA-TCT). This technique provides sensitivi…
Test-beam results from MiniCACTUS-v2: A depleted monolithic CMOS timing sensor prototype
Y. Degerli, R. Aleksan, R. Casanova +9
MiniCACTUS-v2 is a monolithic sensor prototype designed in LF 150 nm CMOS process for time tagging of individual Minimum Ionizing Particles with an accuracy better than 100 ps. The…
Enhancing Radiation Hardness and Granularity in HV-CMOS: The RD50-MPW4 Sensor
B. Pilsl, T. Bergauer, R. Casanova +15
The latest HV-CMOS pixel sensor developed by the former CERN-RD50-CMOS group, known as the \mpw, demonstrates competitive radiation tolerance, spatial granularity, and timing resol…
Characterization of the RD50-MPW4 HV-CMOS pixel sensor
B. Pilsl, T. Bergauer, R. Casanova +14
The RD50-MPW4 is the latest HV-CMOS pixel sensor from the CERN-RD50-CMOS working group, designed to evaluate the HV-CMOS technology in terms of spatial resolution, radiation hardne…