Impact of Junction Depth and Abruptness on the Activation and the Leakage Current in Germanium n${}^{+}$/p Junctions

William Hsu, Amritesh Rai, Xiaoru Wang +3

The phosphorous activation in Ge n${}^{+}$/p junctions is compared in terms of junction depth, by using laser spike annealing at 860°C for 400$\mu$s. The reverse junction leakage is fo…