Binding energy of negatively charged exciton in a semiconductor quantum well: the role of interface defects

Luis C. O. Dacal, R. Ferreira, G. Bastard +1

We present a model to take into account the interface defects contribution on the binding energy of charged exciton in GaAs/Al${}_{0.3}$Ga${}_{0.7}$As quantum wells. The dependence of…