247 citations · 911 across the 13 of their papers we have counts for
13 papers
Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot
Xunyao Luo, Xander Peetroons, Tsung-Yeh Yang +27
Electron spin resonance spectroscopy (ESR) of a single electron in planar Si-MOS quantum dot is reported in the vicinity of a valley level anti-crossing. A number of one and two-ph…
A current source with metrological precision made on a 300mm silicon MOS process
Nathan Johnson, Stefan Kubicek, Julien Jussot +5
Although the measurement of current is now defined with respect to the electronic charge, producing a current standard based on a single-electron source remains challenging. The er…
Long coherence silicon spin qubit fabricated in a 300 mm industrial foundry
Petar Tomić, Patrick Bütler, Yuze Wu +17
Silicon spin qubits offer long coherence times, a compact footprint and compatibility with industrial CMOS manufacturing. Here, we investigate spin qubits hosted in quantum dots fa…
Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
J. P. Wendoloski, J. Hillier, S. D. Liles +17
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…
Probing g-tensor reproducibility and spin-orbit effects in planar silicon hole quantum dots
Ik Kyeong Jin, Joseph Hillier, Scott D. Liles +9
In this work, we probe the sensitivity of hole-spin properties to hole occupation number in a planar silicon double-quantum dot device fabricated on a 300 mm integrated platform. U…
Almost Linear Decoder for Optimal Geometrically Local Quantum Codes
Quinten Eggerickx, Adam Wills, Ting-Chun Lin +2
Geometrically local quantum codes, which are error correction codes embedded in with checks acting only on qubits within a fixed spatial distance, have garnered sign…