activity
20032025
most citedMie-resonances, infrared emission and band gap of InN

213 citations · 641 across the 24 of their papers we have counts for

collaborators

24 papers

cond-mat.mtrl-sci2025

Time-resolved dynamics of GaN waveguide polaritons

Loïc Méchin, François Médard, Joël Leymarie +4

We implement a new experimental approach to directly measure the lifetime of guided polaritons arising from the strong-coupling of GaN excitons and the guided photonic modes of a s…

cond-mat.mtrl-sci2025★ 6 cited

Effects of the built-in electric field on free and bound excitons in a polar GaN/AlGaN/GaN based heterostructure

Loïc Méchin, François Médard, Joël Leymarie +4

Low-temperature luminescence spectra reveal the presence of two independant populations of GaN excitons within a heterostructure in which a thick (…

cond-mat.mtrl-sci2023★ 7 cited

Experimental demonstration of a Two-Dimensional Hole Gas (2DHG) in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy

Loïc Méchin, François Médard, Joël Leymarie +5

The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the obse…

cond-mat.mtrl-sci2022★ 3 cited

Lasing in a ZnO waveguide: clear evidence of polaritonic gain obtained by monitoring the continuous exciton screening

Geoffrey Kreyder, Léa Hermet, Pierre Disseix +7

The stimulated emission of exciton-polaritons was proposed as a means of lowering the lasing threshold because it does not require the dissociation of excitons to obtain an electro…

cond-mat.mes-hall2020★ 2 cited

Charge and spin transport over record distances in GaAs metallic n-type nanowires : II nonlinear charge transport

Hadi Hijazi, Daniel Paget, Guillaume Monier +6

We have investigated the photocarrier charge transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si(111) substr…

cond-mat.mes-hall2020★ 2 cited

Charge and spin transport over record distances in GaAs metallic n-type nanowires : I photocarrier transport in a dense Fermi sea

Hadi Hijazi, Daniel Paget, Guillaume Monier +6

We have investigated charge and spin transport in n-type metallic GaAs nanowires (~ 10^17 cm^-3 doping level), grown by hydride vapor phase epitaxy (HVPE) on Si substrates. This wa…