213 citations · 326 across the 7 of their papers we have counts for
7 papers
Experimental observation of strong light-matter coupling in ZnO microcavities: influence of large excitonic absorption
François Médard, Jesús Zúñiga-Pérez, Pierre Disseix +9
We present experimental observation of the strong light-matter coupling regime in ZnO bulk microcavities grown on silicon. Angle resolved reflectivity measurements, corroborated by…
InN/In nanocomposites: Evidences of plasmonic effects and hidden gap
T. V. Shubina, V. A. Kosobukin, T. A. Komissarova +9
InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy a…
InN/In nanocomposites: Plasmonic effects and a hidden optical gap
T. V. Shubina, V. A. Kosobukin, T. A. Komissarova +9
InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy a…
Influence of the mirrors on the strong coupling regime in planar GaN microcavities
F. Réveret, P. Disseix, J. Leymarie +4
The optical properties of bulk GaN microcavities working in the strong light-matter coupling regime are investigated using angle-dependent reflectivity and photoluminescence…
Resonant light delay in GaN with ballistic and diffusive propagation
T. V. Shubina, M. M. Glazov, A. A. Toropov +8
We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energ…
Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN
T. V. Shubina, S. V. Ivanov, V. N. Jmerik +8
We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge 3.47 eV band, but arises from regions of inversed polarity…