562 citations · 7.3k across the 129 of their papers we have counts for
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Polariton condensation phase diagram in wide bandgap planar microcavities: GaN versus ZnO
O. Jamadi, F. Réveret, E. Mallet +12
GaN and ZnO microcavities have been grown on patterned silicon substrate. Thanks to a common platform these microcavities share similar photonic properties with large quality facto…
ZnO-Based Polariton Laser Operating at Room Temperature: From Excitonic to Photonic Condensate
Feng Li, Laurent Orosz, Olfa Kamoun +13
A laser threshold is determined by the gain condition, which has been progressively reduced by the use of heterostructures and of quantum confinement. The polariton laser is the ul…
Coherent interactions between phonons and exciton or exciton-polariton condensates
D. V. Vishnevsky, N. A. Gippius, I. A. Shelykh +2
We analyse the interaction of exciton and exciton-polariton condensates in semiconductor microcavity with a coherent acoustic wave. An analytical solution for the dispersion of exc…
Spontaneous Polarisation Build up in a Room Temperature Polariton Laser
J. J. Baumberg, A. V. Kavokin, S. Christopoulos +9
We observe the build up of strong (~50%) spontaneous vector polarisation in emission from a GaN-based polariton laser excited by short optical pulses at room temperature. The Stoke…
Bose glass and superfuid phases of cavity polaritons
G. Malpuech, D. D. Solnyshkov, H. Ouerdane +2
We report the calculation of cavity exciton-polariton phase diagram which takes into account the presence of realistic structural disorder. Polaritons are modelled as weakly intera…
Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN
T. V. Shubina, S. V. Ivanov, V. N. Jmerik +8
We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge 3.47 eV band, but arises from regions of inversed polarity…