213 citations · 224 across the 7 of their papers we have counts for
7 papers
A nonlinear metasurface combining telecom-range intersubband transitions in GaN/AlN quantum wells with resonant plasmonic antenna arrays
Jan Mundry, Florian Spreyer, Valentin Jmerik +3
We realize and investigate a nonlinear metasurface taking advantage of intersubband transitions in ultranarrow GaN/AlN multi-quantum well heterostructures. Owing to huge band offse…
III-nitride tunable cup-cavities supporting quasi whispering gallery modes from ultraviolet to near infrared
T. V. Shubina, G. Pozina, V. N. Jmerik +5
Rapidly developing nanophotonics needs microresonators for different spectral ranges, formed by chip-compatible technologies. In addition, the tunable ones are in greatest demand.…
Identification of main contributions to conductivity of epitaxial InN
T. A. Komissarova, O. Drachenko, V. N. Jmerik +3
Complex effect of different contributions (spontaneously formed In nanoparticles, near-interface, surface and bulk layers) on electrophysical properties of InN epitaxial films is s…
InN/In nanocomposites: Evidences of plasmonic effects and hidden gap
T. V. Shubina, V. A. Kosobukin, T. A. Komissarova +9
InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy a…
InN/In nanocomposites: Plasmonic effects and a hidden optical gap
T. V. Shubina, V. A. Kosobukin, T. A. Komissarova +9
InN/In nanocomposites with periodical In inclusions amounting up to 30% of the total volume exhibit bright emission near 0.7 eV explicitly associated with In clusters. Its energy a…
Similarity of the 3.42 eV and near-band-edge 3.47 eV luminescence bands in GaN
T. V. Shubina, S. V. Ivanov, V. N. Jmerik +8
We demonstrate that the 3.42 eV photoluminescence (PL) band in GaN is of the same intrinsic origin as the near-edge 3.47 eV band, but arises from regions of inversed polarity…