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Dimension Engineering of Narrow Bandgap Semiconductor InAs Nanostructures in Wafer-Scale
Dong Pan, Ji-Yin Wang, Wei Zhang +7
Here, we demonstrate an approach that provides a precise control of the dimension of InAs from one-dimensional nanowires to wafer-scale free-standing two-dimensional nanosheets, wh…
Bismuth and Antimony Based Oxyhalides and Chalcohalides as Potential Optoelectronic Materials
Zhao Ran, Xinjiang Wang, Yuwei Li +5
In the last decade the ns cations (e.g., Pb and Sn) based halides have emerged as one of the most exciting new classes of optoelectronic materials, as exemplified…
Interlayer Coupling in Two-Dimensional Semiconductor Materials
Zhiming Shi, Xinjiang Wang, Yuanhui Sun +2
Two-dimensional (2D) graphene-like layered semiconductors provide a new platform for materials research because of their unique mechanical, electronic and optical attributes. Their…
Intrinsic defect properties in halide double perovskites for optoelectronic applications
Tianshu Li, Xingang Zhao, Dongwen Yang +2
Lead-free halide double perovskites with the formula of quaternary AB'B'X have recently attracted intense interest as alternatives to lead-halide-perovskite-base…
InSe: a two-dimensional material with strong interlayer coupling
Yuanhui Sun, Shulin Luo, Xin-Gang Zhao +3
Atomically thin, two-dimensional (2D) indium selenide (InSe) has attracted considerable attention due to large tunability in the band gap (from 1.4 to 2.6 eV) and high carrier mobi…