128 citations · 296 across the 5 of their papers we have counts for
5 papers
Decoration of growth sector boundaries with single nitrogen vacancy centres in as-grown single crystal HPHT synthetic diamond
Philip L. Diggle, Ulrika F. S. D'Haenens-Johansson, Ben L. Green +5
Large (> 100 mm), relatively pure (type II) and low birefringence single crystal diamond can be produced by high pressure high temperature (HPHT) synthesis. In this study we ex…
Doubly-charged silicon vacancy center, photochromism, and Si-N complexes in co-doped diamond
B G Breeze, C J Meara, X X Wu +13
We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribut…
Electronic structure of the neutral silicon-vacancy center in diamond
B. L. Green, M. W. Doherty, E. Nako +5
The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin li…
The neutral silicon-vacancy center in diamond: spin polarization and lifetimes
B. L. Green, S. Mottishaw, B. G. Breeze +6
We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond (), an defect which emits with a zero-phonon line at 946…
Increasing the coherence time of single electron spins in diamond by high temperature annealing
Boris Naydenov, Friedemann Reinhard, Anke Lämmle +6
Negatively charged Nitrogen-Vacancy (NV) centers in diamond produced by ion implantation often show properties different from NVs created during the crystal growth. We observe…