82 citations · 104 across the 2 of their papers we have counts for
3 papers · 1 filter
Decoration of growth sector boundaries with single nitrogen vacancy centres in as-grown single crystal HPHT synthetic diamond
Philip L. Diggle, Ulrika F. S. D'Haenens-Johansson, Ben L. Green +5
Large (> 100 mm), relatively pure (type II) and low birefringence single crystal diamond can be produced by high pressure high temperature (HPHT) synthesis. In this study we ex…
Doubly-charged silicon vacancy center, photochromism, and Si-N complexes in co-doped diamond
B G Breeze, C J Meara, X X Wu +13
We report the first experimental observation of a doubly-charged defect in diamond, SiV2-, in silicon and nitrogen co-doped samples. We measure spectroscopic signatures we attribut…
Electronic structure of the neutral silicon-vacancy center in diamond
B. L. Green, M. W. Doherty, E. Nako +5
The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin li…