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20172026
most citedBlockHammer: Preventing RowHammer at Low Cost by Blacklisting Rapidly-Accessed DRAM Rows

124 citations · 388 across the 53 of their papers we have counts for

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35 papers · 1 filter

cs.AR2026

Terracotta: Enabling the Adoption of New DRAM Techniques via a Flexible DRAM Interface and Memory Controller

Harsh Songara, Konstantinos Kanellopoulos, F. Nisa Bostancı +6

DRAM continues to limit the performance, energy efficiency, and robustness of modern systems. Many prior works propose DRAM techniques that support in-DRAM computation, improve mem…

cs.AR2026

CertiFlash: A Formal Verification Framework for Flash Translation Layers in Computational Solid State Drives

Harshita Gupta, Mayank Kabra, Rakesh Nadig +10

Data-intensive applications move large amounts of data from storage to the compute unit, incurring significant data movement overhead. Storage-centric computing reduces this overhe…

cs.AR2026

Clutch: High Performance Vector-Scalar Comparison using DRAM via Chunked Temporal Coding

Daichi Tokuda, Tatsuya Kubo, Ismail Emir Yuksel +8

Vector-scalar comparison is a fundamental computation primitive that compares each element in a vector against a single scalar value. It is widely used in various data-intensive wo…

cs.AR2026

DejaVu: Why You Should Write to Your DRAM Rows Twice, Carefully

Haocong Luo, İsmail Emir Yüksel, Ataberk Olgun +4

We provide the first experimental demonstration of DejaVu, a phenomenon where the data previously written to DRAM cells affects DRAM's vulnerability to read disturbance. Our experi…

cs.AR2026

PuDGhost: Experimental Analysis of Computation Result Corruption in Processing-using-DRAM Operations on Real DRAM Chips and Implications for Future Systems

Daichi Tokuda, İsmail Emir Yüksel, Tatsuya Kubo +7

Processing-using-DRAM (PuD) is a promising computation paradigm that alleviates frequent data movement between main memory and processing units by using each DRAM column as a compu…

cs.AR2026

A Modern Large-Scale Memory Characterization Laboratory

Ataberk Olgun, Haocong Luo, Ismail Emir Yuksel +3

Real memory chip characterization yields insights into fundamental operational characteristics of modern memory, enabling new mechanisms that improve memory performance, robustness…

cs.AR2026

DiscoRD: An Experimental Methodology for Quickly Discovering the Reliable Read Disturbance Threshold of Real DRAM Chips

Ataberk Olgun, F. Nisa Bostanci, Ismail Emir Yuksel +4

State-of-the-art DRAM read disturbance mitigations rely on the read disturbance threshold (RDT) (e.g., the number of aggressor row activations needed to induce the first read distu…

cs.AR2025

In-DRAM True Random Number Generation Using Simultaneous Multiple-Row Activation: An Experimental Study of Real DRAM Chips

Ismail Emir Yuksel, Ataberk Olgun, F. Nisa Bostanci +5

In this work, we experimentally demonstrate that it is possible to generate true random numbers at high throughput and low latency in commercial off-the-shelf (COTS) DRAM chips by…

cs.AR2025

ColumnDisturb: Understanding Column-based Read Disturbance in Real DRAM Chips and Implications for Future Systems

İsmail Emir Yüksel, Ataberk Olgun, F. Nisa Bostancı +3

We experimentally demonstrate a new widespread read disturbance phenomenon, ColumnDisturb, in real commodity DRAM chips. By repeatedly opening or keeping a DRAM row (aggressor row)…

cs.AR2025

Cleaning up the Mess: Re-Evaluating the Real-System Modeling Accuracy of Ramulator 2.0

F. Nisa Bostanci, Haocong Luo, Ataberk Olgun +4

A MICRO 2024 best paper runner-up publication (the Mess paper) with all three artifact badges awarded (including ``Reproducible'') proposes a new benchmark to evaluate real and sim…

cs.AR2025

Variable Read Disturbance: An Experimental Analysis of Temporal Variation in DRAM Read Disturbance

Ataberk Olgun, F. Nisa Bostanci, Ismail Emir Yuksel +6

Modern DRAM chips are subject to read disturbance errors. State-of-the-art read disturbance mitigations rely on accurate and exhaustive characterization of the read disturbance thr…

cs.AR2025

Understanding RowHammer Under Reduced Refresh Latency: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions

Yahya Can Tuğrul, A. Giray Yağlıkçı, İsmail Emir Yüksel +6

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victi…

cs.AR2024★ 1 cited

An Experimental Characterization of Combined RowHammer and RowPress Read Disturbance in Modern DRAM Chips

Haocong Luo, Ismail Emir Yüksel, Ataberk Olgun +3

DRAM read disturbance can break memory isolation, a fundamental property to ensure system robustness (i.e., reliability, security, safety). RowHammer and RowPress are two different…

cs.AR2024

RowPress Vulnerability in Modern DRAM Chips

Haocong Luo, Ataberk Olgun, A. Giray Yağlıkçı +6

Memory isolation is a critical property for system reliability, security, and safety. We demonstrate RowPress, a DRAM read disturbance phenomenon different from the well-known RowH…

cs.AR2024

Simultaneous Many-Row Activation in Off-the-Shelf DRAM Chips: Experimental Characterization and Analysis

Ismail Emir Yuksel, Yahya Can Tugrul, F. Nisa Bostanci +8

We experimentally analyze the computational capability of commercial off-the-shelf (COTS) DRAM chips and the robustness of these capabilities under various timing delays between DR…

cs.AR2024★ 1 cited

MIMDRAM: An End-to-End Processing-Using-DRAM System for High-Throughput, Energy-Efficient and Programmer-Transparent Multiple-Instruction Multiple-Data Processing

Geraldo F. Oliveira, Ataberk Olgun, Abdullah Giray Yağlıkçı +4

Processing-using-DRAM (PUD) is a processing-in-memory (PIM) approach that uses a DRAM array's massive internal parallelism to execute very-wide data-parallel operations, in a singl…

cs.AR2024★ 1 cited

Functionally-Complete Boolean Logic in Real DRAM Chips: Experimental Characterization and Analysis

Ismail Emir Yuksel, Yahya Can Tugrul, Ataberk Olgun +7

Processing-using-DRAM (PuD) is an emerging paradigm that leverages the analog operational properties of DRAM circuitry to enable massively parallel in-DRAM computation. PuD has the…

cs.AR2023★ 3 cited

PULSAR: Simultaneous Many-Row Activation for Reliable and High-Performance Computing in Off-the-Shelf DRAM Chips

Ismail Emir Yuksel, Yahya Can Tugrul, F. Nisa Bostanci +8

Data movement between the processor and the main memory is a first-order obstacle against improving performance and energy efficiency in modern systems. To address this obstacle, P…

cs.AR2023★ 2 cited

DaPPA: A Unified Data-Parallel Programming Framework for Efficient Processing-in-Memory Execution

Geraldo F. Oliveira, Alain Kohli, David Novo +5

Processing-in-memory (PIM) alleviates data-movement bottlenecks by placing computation near or inside memory. Two general-purpose PIM paradigms are now practical: processing-near-m…

cs.AR2023

Ramulator 2.0: A Modern, Modular, and Extensible DRAM Simulator

Haocong Luo, Yahya Can Tuğrul, F. Nisa Bostancı +3

We present Ramulator 2.0, a highly modular and extensible DRAM simulator that enables rapid and agile implementation and evaluation of design changes in the memory controller and D…

cs.AR2022★ 2 cited

TuRaN: True Random Number Generation Using Supply Voltage Underscaling in SRAMs

İsmail Emir Yüksel, Ataberk Olgun, Behzad Salami +6

Prior works propose SRAM-based TRNGs that extract entropy from SRAM arrays. SRAM arrays are widely used in a majority of specialized or general-purpose chips that perform the compu…

cs.AR2022

DRAM Bender: An Extensible and Versatile FPGA-based Infrastructure to Easily Test State-of-the-art DRAM Chips

Ataberk Olgun, Hasan Hassan, A. Giray Yağlıkçı +6

To understand and improve DRAM performance, reliability, security and energy efficiency, prior works study characteristics of commodity DRAM chips. Unfortunately, state-of-the-art…

cs.AR2022★ 5 cited

HiRA: Hidden Row Activation for Reducing Refresh Latency of Off-the-Shelf DRAM Chips

Abdullah Giray Yağlıkçı, Ataberk Olgun, Minesh Patel +5

DRAM is the building block of modern main memory systems. DRAM cells must be periodically refreshed to prevent data loss. Refresh operations degrade system performance by interferi…

cs.AR2022★ 2 cited

Self-Managing DRAM: A Low-Cost Framework for Enabling Autonomous and Efficient in-DRAM Operations

Hasan Hassan, Ataberk Olgun, A. Giray Yaglikci +2

The memory controller is in charge of managing DRAM maintenance operations (e.g., refresh, RowHammer protection, memory scrubbing) to reliably operate modern DRAM chips. Implementi…