120 citations · 588 across the 19 of their papers we have counts for
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Modeling of Radiation Damage Effects in Silicon Detectors at High Fluences HL-LHC with Sentaurus TCAD
Daniele Passeri, Francesco Moscatelli, Arianna Morozzi +1
In this work we propose the application of an enhanced radiation damage model based on the introduction of deep level traps / recombination centers suitable for device level numeri…
Combined Bulk and Surface Radiation Damage Effects at Very High Fluences in Silicon Detectors: Measurements and TCAD Simulations
F. Moscatelli, D. Passeri, A. Morozzi +3
In this work we propose a new combined TCAD radiation damage modelling scheme, featuring both bulk and surface radiation damage effects, for the analysis of silicon detectors aimed…
Measurements and TCAD Simulations of Bulk and Surface Radiation Damage Effects in Silicon Detectors
F. Moscatelli, P. Maccagnani, D. Passeri +7
In this work we propose the application of a radiation damage model based on the introduction of deep level traps/recombination centers suitable for device level numerical simulati…