455 citations · 709 across the 16 of their papers we have counts for
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Selective Area Growth Rates of III-V Nanowires
Martin Espiñeira Cachaza, Anna Wulff Christensen, Daria Beznasyuk +6
Selective area growth (SAG) of semiconductors is a scalable method for fabricating gate-controlled quantum platforms. This letter reports on the adatom diffusion, incorporation, an…
Electronic structure of InAs and InSb surfaces: density functional theory and angle-resolved photoemission spectroscopy
Shuyang Yang, Niels B. M. Schröter, Sergej Schuwalow +10
The electronic structure of surfaces plays a key role in the properties of quantum devices. However, surfaces are also the most challenging to simulate and engineer. Here, we study…
Au-Assisted Substrate-Faceting for Inclined Nanowire Growth
Jung-Hyun Kang, Filip Krizek, Magdalena Zaluska-Kotur +4
We study the role of gold droplets in the initial stage of nanowire growth via the vapor liquid solid method. Apart from serving as a collections center for growth species, the gol…
Transparent Gatable Superconducting Shadow Junctions
Sabbir A. Khan, Charalampos Lampadaris, Ajuan Cui +14
Gate tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy pro…
Band bending profile and band offset extraction at semiconductor-metal interfaces
Sergej Schuwalow, Niels B. M. Schroeter, Jan Gukelberger +11
The band alignment of semiconductor-metal interfaces plays a vital role in modern electronics, but remains difficult to predict theoretically and measure experimentally. For interf…
Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure
Yu Liu, Alessandra Luchini, Sara Martí-Sánchez +16
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field and local proximitized magnetic…