189 citations · 529 across the 9 of their papers we have counts for
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cond-mat.mtrl-sci2010★ 1 cited
Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve
B. G. Park, J. Wunderlich, X. Marti +9
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard…
cond-mat.mtrl-sci2009★ 140 cited
MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers
K. Mizunuma, S. Ikeda, J. H. Park +7
The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with…