activity
20172024
most citedAdaptive hard and tough mechanical response in single-crystal B1 VNx ceramics via control of anion vacancies

67 citations · 207 across the 11 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2024★ 16 cited

Coherent control of a triangular exchange-only spin qubit

Edwin Acuna, Joseph D. Broz, Kaushal Shyamsundar +14

We demonstrate coherent control of a three-electron exchange-only spin qubit with the quantum dots arranged in a close-packed triangular geometry. The device is tuned to confine on…

cond-mat.mes-hall2024★ 4 cited

Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device

Morteza Aghaee, Alejandro Alcaraz Ramirez, Zulfi Alam +159

The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operati…

cond-mat.mtrl-sci2022★ 5 cited

Nonvolatile Electric-Field Control of Inversion Symmetry

Lucas Caretta, Yu-Tsun Shao, Jia Yu +20

In condensed-matter systems, competition between ground states at phase boundaries can lead to significant changes in material properties under external stimuli, particularly when…

quant-ph2020★ 12 cited

Optimization of Quantum-dot Qubit Fabrication via Machine Learning

Antonio B. Mei, Ivan Milosavljevic, Amanda L. Simpson +6

Precise nanofabrication represents a critical challenge to developing semiconductor quantum-dot qubits for practical quantum computation. Here, we design and train a convolutional…

cond-mat.mtrl-sci2020★ 67 cited

Adaptive hard and tough mechanical response in single-crystal B1 VNx ceramics via control of anion vacancies

A. B. Mei, H. Kindlund, E. Broitman +4

High hardness and toughness are generally considered mutually exclusive properties for single-crystal ceramics. Combining experiments and ab initio molecular dynamics (AIMD) atomis…

physics.app-ph2019★ 13 cited

Spin-Orbit-Torque Field-Effect Transistor (SOTFET): Proposal for a New Magnetoelectric Memory

Xiang Li, Phillip Dang, Joseph Casamento +8

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large…