4 citations · 4 across the 1 of their papers we have counts for
2 papers
physics.app-ph2017★ 4 cited
The Vapor-Solid-Solid Growth of Ge Nanowires on Ge (110) by Molecular Beam Epitaxy
Zhongyunshen Zhu, Yuxin Song, Zhenpu Zhang +7
We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy (MBE) at 220 °C, which is compatible with the temperature window for Si-ba…
cond-mat.mtrl-sci2016
Photoluminescence of InGaAs/GaAsBi/InGaAs type-II quantum well grown by gas source molecular beam epitaxy
Wenwu Pan, Liang Zhu, Liyao Zhang +6
InGaAs/GaAsBi/InGaAs quantum wells (QWs) were grown on GaAs substrates by gas source molecular beam epitaxy for realizing the type II band-edge line-up. Both type I and type II tra…