Scalable $\mathrm{A}{\mathrm{l}}_2{\mathrm{O}}_3-\mathrm{Ti}{\mathrm{O}}_2$ Conductive Oxide Interfaces as Defect Reservoirs for Resistive Switching Devices

Yang Li, Wei Wang, Di Zhang +5

Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a s…