29 citations · 56 across the 5 of their papers we have counts for
5 papers
Effective out-of-plane g-factor in strained-Ge/SiGe quantum dots
Andrew J. Miller, Mitchell Brickson, Will J. Hardy +6
Recently, lithographic quantum dots in strained-Ge/SiGe have become a promising candidate for quantum computation, with a remarkably quick progression from demonstration of a quant…
Single and Double Hole Quantum Dots in Strained Ge/SiGe Quantum Wells
Will J. Hardy, C. Thomas Harris, Yi-Hsin Su +6
Even as today's most prominent spin-based qubit technologies are maturing in terms of capability and sophistication, there is growing interest in exploring alternate material platf…
Weak anti-localization of two-dimensional holes in germanium beyond the diffusive regime
Chung-Tao Chou, Noah Tobias Jacobson, Jonathan Edward Moussa +5
Gate-controllable spin-orbit coupling is often one requisite for spintronic devices. For practical spin field-effect transistors, another essential requirement is ballistic spin tr…
Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
E. Bussmann, John King Gamble, J. C. Koepke +9
As a first step to porting scanning tunneling microscopy methods of atomic-precision fabrication to a strained-Si/SiGe platform, we demonstrate post-growth P atomic-layer doping of…
Density-controlled quantum Hall ferromagnetic transition in a two-dimensional hole system
T. M. Lu, L. A. Tracy, D. Laroche +5
Quantum Hall ferromagnetic transitions are typically achieved by increasing the Zeeman energy through in-situ sample rotation, while transitions in systems with pseudo-spin indices…