Bunches of misfit dislocations on the onset of relaxation of Si${}_{0.4}$Ge${}_{0.6}$/Si(001) epitaxial films revealed by high-resolution x-ray diffraction

Vladimir Kaganer, Tatjana Ulyanenkova, Andrei Benediktovitch +2

The experimental x-ray diffraction patterns of a Si${}_{0.4}$Ge${}_{0.6}$/Si(001) epitaxial film with a low density of misfit dislocations are modeled by the Monte Carlo method. It is…