most citedAbrupt p-n junction using ionic gating at zero-bias in bilayer graphene

10 citations · 10 across the 1 of their papers we have counts for

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1 paper

cond-mat.mes-hall2017★ 10 cited

Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene

Sameer Grover, Anupama Joshi, Ashwin Tulapurkar +1

Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electr…