X-ray scattering study of GaN nanowires grown on Ti/Al${}_2$O${}_3$ by molecular beam epitaxy

Vladimir M. Kaganer, Oleg V. Konovalov, Gabriele Calabrese +5

GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al${}_2$O${}_3$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scatteri…