Direct tunneling through high-$\kappa$ amorphous HfO${}_2$: effects of chemical modification

Yin Wang, Zhizhou Yu, Ferdows Zahid +4

We report first principles modeling of quantum tunneling through amorphous HfO${}_2$ dielectric layer of metal-oxide-semiconductor (MOS) nanostructures in the form of n-Si/HfO${}_2$/Al…