929 citations · 1.8k across the 12 of their papers we have counts for
13 papers
Grafted Low-Leakage Si/AlN p-n Diodes Enabled by Fluorinated AlN Interface
Yi Lu, Tsung-Han Tsai, Qingxiao Wang +19
Ultrawide-bandgap AlN is a promising material for next-generation power electronics; however, its practical implementation is hindered by unstable surface chemistry and the high ac…
Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer
Jie Zhou, Yifan Wang, Ziqian Yao +13
We report the fabrication and characteristics of GaAs/Si p+/n+ heterojunction tunnel diodes. These diodes were fabricated via grafting the freestanding single-crystalline p-type de…
Monocrystalline Si/-GaO p-n heterojunction diodes fabricated via grafting
Jiarui Gong, Donghyeok Kim, Hokyung Jang +19
The -GaO has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…
Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires
Jing-Kai Qin, Pai-Ying Liao, Mengwei Si +15
Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physica…
Atomically Controlled Tunable Doping in High Performance WSe2 Devices
Chin-Sheng Pang, Terry Y. T. Hung, Ava Khosravi +5
Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transp…
Formation of Graphene atop a Si adlayer on the C-face of SiC
Jun Li, Qingxiao Wang, Guowei He +6
The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6)…
Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films
Tingting Shen, Daniel Valencia, Qingxiao Wang +6
Copper nanowires are widely used as on-chip interconnects due to superior conductivity. However, with aggressive Cu interconnect scaling, the diffusive surface scattering of electr…
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures
G. William Burg, Nitin Prasad, Babak Fallahazad +8
We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe l…
Field-effect transistors made from solution-grown two-dimensional tellurene
Yixiu Wang, Gang Qiu, Ruoxing Wang +9
The reliable production of two-dimensional crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a var…
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
Angelica Azcatl, Xiaoye Qin, Abhijith Prakash +11
Controllable doping of two-dimensional materials is highly desired for ideal device performance in both hetero- and p-n homo-junctions. Herein, we propose an effective strategy for…
Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces
Devashish P. Gopalan, Patrick C. Mende, Sergio C. de la Barrera +10
Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the…
Direct observation of nanometer-scale amorphous layers and oxide crystallites at grain boundaries in polycrystalline Sr1-xKxFe2As2 superconductors
Lei Wang, Yanwei Ma, Qingxiao Wang +8
We report here an atomic resolution study of the structure and composition of the grain boundaries in polycrystalline Sr0.6K0.4Fe2As2 superconductor. A large fraction of grain boun…
Dissipationless Anomalous Hall Current in Films
W. J. Xu, B. Zhang, Z. Wang +3
The observation of dissipationless anomalous Hall current is one of the experimental evidences to confirm the intrinsic origin of anomalous Hall effect. To study the origin of anom…