75 citations · 75 across the 1 of their papers we have counts for
5 papers
Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires
Jing-Kai Qin, Pai-Ying Liao, Mengwei Si +15
Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physica…
Atomically Controlled Tunable Doping in High Performance WSe2 Devices
Chin-Sheng Pang, Terry Y. T. Hung, Ava Khosravi +5
Two-dimensional transitional metal dichalcogenide (TMD) field-effect transistors (FETs) are promising candidates for future electronic applications, owing to their excellent transp…
Formation of Graphene atop a Si adlayer on the C-face of SiC
Jun Li, Qingxiao Wang, Guowei He +6
The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6)…
Studies of two-dimensional MoS2 on enhancing the electrical performance of ultrathin copper films
Tingting Shen, Daniel Valencia, Qingxiao Wang +6
Copper nanowires are widely used as on-chip interconnects due to superior conductivity. However, with aggressive Cu interconnect scaling, the diffusive surface scattering of electr…
Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures
G. William Burg, Nitin Prasad, Babak Fallahazad +8
We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe l…