43 citations · 137 across the 4 of their papers we have counts for
4 papers
Tuning the Interlayer Microstructure and Residual Stress of Buffer-Free Direct Bonding GaN/Si Heterostructures
Yan Zhou, Shi Zhou, Shun Wan +8
The direct integration of GaN with Si can boost great potential for low-cost, large-scale, and high-power device applications. However, it is still challengeable to directly grow G…
Gallium nitride phononic integrated circuits for future RF front-ends
Mahmut Bicer, Stefano Valle, Jacob Brown +2
Achieving monolithic integration of passive acoustic wave devices, in particular RF filters, with active devices such as RF amplifiers and switches, is the optimal solution to meet…
Quantifying Temperature-dependent Substrate Loss in GaN-on-Si RF Technology
Hareesh Chandrasekar, Michael J. Uren, Michael A. Casbon +6
Intrinsic limits to temperature-dependent substrate loss for GaN-on-Si technology, due to the change in resistivity of the substrate with temperature, are evaluated using an experi…
Surface zeta potential and diamond seeding on gallium nitride films
Soumen Mandal, Evan L. H. Thomas, Callum Middleton +9
Measurement of zeta potential of Ga and N-face gallium nitride has been carried out as function of pH. Both the faces show negative zeta potential in the pH range 5.5-9. The Ga fac…