activity
20162026
most citedLocalization of electronic states in III-V semiconductor alloys: a comparative study

34 citations · 66 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2026

Best Practices for First-Principles Modeling of Amorphous Oxide Semiconductors: A Statistical Framework and Application to Zn-Sn-O

Michiel J. van Setten, Tonglin L. Newsom, Christopher Pashartis +3

Ternary and quaternary amorphous oxide semiconductors have many properties that make them promising candidates for use in electronic applications like display, memory, and back end…

cond-mat.mtrl-sci2025★ 4 cited

Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI Degradation

K. Vishwakarma, K. Lee, A. Kruv +8

This study investigates the impact of out-of-plane compressive mechanical stress (MS) on the performance and reliability of n-channel IGZO thin film transistors (TFTs). It is demon…

cond-mat.mtrl-sci2024

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon

Christopher Pashartis, Michiel J. van Setten, Geoffrey Pourtois

The fabrication of complex nano-scale structures, which is a crucial step in the scaling of (nano) electronic devices, often leads to residual stress in the different layers presen…

physics.app-ph2024★ 10 cited

Computing Elastic Tensors of Amorphous Materials from First-Principles

C. Pashartis, M. J. van Setten, M. Houssa +1

Advancements in modern semiconductor devices increasingly depend on the utilization of amorphous materials and the reduction of material thickness, pushing the boundaries of their…

cond-mat.mtrl-sci2017★ 18 cited

Alloying strategy for two-dimensional GaN optical emitters

C. Pashartis, O. Rubel

The recent progress in formation of two-dimensional (2D) GaN by a migration-enhanced encapsulated technique opens up new possibilities for group III-V 2D semiconductors with a band…

cond-mat.mtrl-sci2016★ 34 cited

Localization of electronic states in III-V semiconductor alloys: a comparative study

C. Pashartis, O. Rubel

Electronic properties of III-V semiconductor alloys are examined using first principles with the focus on the spatial localization of electronic states. We compare localization at…