activity
20172019
most citedThickness-dependent in-plane polarization and structural phase transition in van der Waals Ferroelectric CuInP2S6

104 citations · 105 across the 2 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2019

Atomic-scale observations of electrical and mechanical manipulation of topological polar flux-closure

Xiaomei Li, Congbing Tan, Peng Gao +12

The ability to controllably manipulate the complex topological polar configurations, such as polar flux-closure via external stimuli, enables many applications in electromechanical…

cond-mat.mtrl-sci2019104 cited

Thickness-dependent in-plane polarization and structural phase transition in van der Waals Ferroelectric CuInP2S6

Jianming Deng, Yanyu Liu, Mingqiang Li +7

Van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intra-layer bonding, therefore the exfoliation along the stacking direction enables the achieve…

cond-mat.mtrl-sci2019

Atomic-environment-dependent thickness of ferroelastic domain walls

Mingqiang Li, Xiaomei Li, Yuehui Li +3

Domain walls are of increasing interest in ferroelectrics because of their unique properties and potential applications in future nanoelectronics. However, the thickness of ferroel…

cond-mat.mtrl-sci2019

Atomic Imaging of Mechanically Induced Topological Transition of Ferroelectric Vortices

Pan Chen, Xiangli Zhong, Jacob A. Zorn +14

Ferroelectric vortices formed through complex lattice-charge interactions have great potential in applications for future nanoelectronics such as memories. For practical applicatio…

cond-mat.mtrl-sci2018

Atomic Origin of Ti Deficient Dislocation in SrTiO3 Bicrystal and Their Electronic Structures

Xujing Li, Shulin Chen, Mingqiang Li +5

Dislocations in perovskite oxides have important impacts on their physical and chemical properties, which are determined by their unique atomic environments. In the present study,…

cond-mat.mtrl-sci20171 cited

Ultrafast Epitaxial Growth of Metre-Sized Single-Crystal Graphene on Industrial Cu Foil

Xiaozhi Xu, Zhihong Zhang, Jichen Dong +20

A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For ma…