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cond-mat.mtrl-sci2025
Site-selective enhancement of Eu emission in delta-doped GaN
Amelia R. Klein, Hayley J. Austin, Fumikazu Murakami +7
Europium-doped gallium nitride (GaN:Eu) is a promising platform for classical and quantum optoelectronic applications. When grown using organometallic vapor-phase epitaxy, the domi…
cond-mat.mtrl-sci2019★ 22 cited
Excitation efficiency and limitations of the luminescence of Eu3+ ions in GaN
Dolf Timmerman, Brandon Mitchell, Shuhei Ichikawa +3
The excitation efficiency and external luminescence quantum efficiency of trivalent Eu3+ ions doped into gallium nitride (GaN) was studied under optical and electrical excitation.…