activity
20172019
most citedIntrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping

34 citations · 63 across the 2 of their papers we have counts for

collaborators

5 papers

physics.app-ph201929 cited

Edge-Epitaxial Growth of InSe Nanowires toward High-Performance Photodetectors

Song Hao, Shengnan Yan, Yang Wang +17

Semiconducting nanowires offer many opportunities for electronic and optoelectronic device applications due to their special geometries and unique physical properties. However, it…

cond-mat.mes-hall2018

Experimental identification of critical condition for drastically enhancing thermoelectric power factor of two-dimensional layered materials

Junwen Zeng, Xin He, Shi-Jun Liang +16

Nano-structuring is an extremely promising path to high performance thermoelectrics. Favorable improvements in thermal conductivity are attainable in many material systems, and the…

cond-mat.mes-hall2018

Negative Photoconductance in van der Waals Heterostructures-Based Floating Gate Phototransistor

Yu Wang, Erfu Liu, Anyuan Gao +9

Van der Waals (vdW) heterostructures made of two-dimensional materials have been demonstrated to be versatile architectures for optoelectronic applications due to strong light-matt…

cond-mat.mtrl-sci2018

Low-Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning

Song Hao, Junwen Zeng, Tao Xu +20

Metallic transition metal dichalcogenides (TMDs) have exhibited various exotic physical properties and hold the promise of novel optoelectronic and topological devices applications…

cond-mat.mtrl-sci201734 cited

Intrinsic p-type W-based transition metal dichalcogenide by substitutional Ta-doping

Yajun Fu, Mingsheng Long, Anyuan Gao +10

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have recently emerged as promising candidates for future electronics and optoelectronics. While most of TMDs are intrin…