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physics.app-ph2019★ 26 cited
Few-Layer MoS/a-Si:H Heterojunction pin-Photodiodes for extended Infrared Detection
Andreas Bablich, Daniel S. Schneider, Paul Kienitz +11
Few-layer molybdenum disulfide (FL-MoS) films have been integrated into amorphous silicon (a-Si:H) pin photodetectors. To achieve this, vertical a-Si:H photodiodes were grown b…
physics.app-ph2018
Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation
HyunJeong Kim WungYeon Kim, Maria O'Brien, Niall McEvoy +6
Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 are reported. The dangling…