49 citations · 129 across the 5 of their papers we have counts for
5 papers
AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)
Stéphane Vézian, Benjamin Damilano, Franck Natali +2
An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found th…
Origins of GaN(0 0 0 1) surface reconstructions
S. Vezian, F. Semond, J. Massies +3
The reconstructions of the Ga polarity GaN(0 0 0 1) surface with and without trace amounts of arsenic and prepared by molecular beam epitaxy (MBE) have been studied with in situ re…
Influence of the mirrors on the strong coupling regime in planar GaN microcavities
F. Réveret, P. Disseix, J. Leymarie +4
The optical properties of bulk GaN microcavities working in the strong light-matter coupling regime are investigated using angle-dependent reflectivity and photoluminescence…
Electronic structure of wurtzite and zinc-blende AlN
P. Jonnard, N. Capron, F. Semond +3
The electronic structure of AlN in wurtzite and zinc-blende phases is studied experimentally and theoretically. By using x-ray emission spectroscopy, the Al 3p, Al 3s and N 2p spec…
Magneto-photoluminescence of GaN/AlGaN quantum wells: valence band reordering and excitonic binding energies
P. A. Shields, R. J. Nicholas, N. Grandjean +1
A re-ordered valence band in GaN/AlGaN quantum wells with respect to GaN epilayers has been found as a result of the observation of an enhanced g-factor in magneto-luminescence spe…