64 citations · 135 across the 5 of their papers we have counts for
5 papers
Laser writable high-K dielectric for van der Waals nano-electronics
N. Peimyoo, M. D. Barnes, J. D. Mehew +9
Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved p…
Sub 20 meV Schottky barriers in metal/MoTe2 junctions
Nicola J. Townsend, Iddo Amit, Monica F. Craciun +1
The newly emerging class of atomically-thin materials has shown a high potential for the realisation of novel electronic and optoelectronic components. Amongst this family, semicon…
Strain-engineered inverse charge-funnelling in layered semiconductors
Adolfo De Sanctis, Iddo Amit, Steven P. Hepplestone +2
The control of charges in a circuit due to an external electric field is ubiquitous to the exchange, storage and manipulation of information in a wide range of applications, from e…
High-Mobility and High-Optical Quality Atomically Thin WS2
Francesco Reale, Pawel Palczynski, Iddo Amit +9
The rise of atomically thin materials has the potential to enable a paradigm shift in modern technologies by introducing multi-functional materials in the semiconductor industry. T…
Role of Charge Traps in the Performance of Atomically-Thin Transistors
Iddo Amit, Tobias J. Octon, Nicola J. Townsend +5
Transient currents in atomically thin MoTe field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a ne…