activity
20022005
most citedCurie temperature and carrier concentration gradients in MBE grown GaMnAs layers

34 citations · 74 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2005★ 29 cited

Effect of annealing on the depth profile of hole concentration in (Ga,Mn)As

W. Limmer, A. Koeder, S. Frank +8

The effect of annealing at 250 C on the carrier depth profile, Mn distribution, electrical conductivity, and Curie temperature of (Ga,Mn)As layers with thicknesses > 200 nm, grown…

cond-mat2003

Growth of GaMnAs under near-stoichiometric conditions

V. Avrutin, D. Humienik, S. Frank +5

We studied the effect of the V/III flux ratio and substrate temperature on magnetotransport properties and lattice parameters of Ga0.96Mn0.04As grown by molecular beam epitaxy. For…

cond-mat.mtrl-sci2003★ 6 cited

Enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices

A. Koeder, W. Limmer, S. Frank +6

We report on an enhancement of the Curie temperature in GaMnAs/InGaMnAs superlattices grown by low-temperature molecular beam epitaxy, which is due to thin InGaMnAs or InGaAs films…

cond-mat2003★ 5 cited

Electronic and magnetic properties of GaMnAs: Annealing effects

W. Limmer, A. Koeder, S. Frank +6

The effect of short-time and long-time annealing at 250C on the conductivity, hole density, and Curie temperature of GaMnAs single layers and GaMnAs/InGaMnAs heterostructures is st…

cond-mat.mtrl-sci2002★ 34 cited

Curie temperature and carrier concentration gradients in MBE grown GaMnAs layers

A. Koeder, S. Frank, W. Schoch +10

We report on detailed investigations of the electronic and magnetic properties of ferromagnetic GaMnAs layers, which have been fabricated by low-temperature molecular-beam epitaxy.…