48 citations · 80 across the 4 of their papers we have counts for
4 papers
Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance
H. Cazin d'Honincthun, S. Galdin-Retailleau, A. Bournel +2
Carbon Nanotube (CNT) appears as a promising candidate to shrink field-effect transistors (FET) to the nanometer scale. Extensive experimental works have been performed recently to…
Monte Carlo study of apparent mobility reduction in nano-MOSFETs
K. Huet, J. Saint-Martin, A. Bournel +4
The concept of mobility is discussed in the case of unstrained and strained nanoscale DG MOSFET thanks to particle Monte Carlo device simulation. Without the introduction of specif…
Electron effective mobility in strained Si/Si1-xGex MOS devices using Monte Carlo simulation
V. Aubry-Fortuna, P. Dollfus, S. Galdin-Retailleau
Based on Monte Carlo simulation, we report the study of the inversion layer mobility in n-channel strained Si/ Si1-xGex MOS structures. The influence of the strain in the Si layer…
Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation
F. Monsef, P. Dollfus, S. Galdin-Retailleau +2
The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electr…