activity
20032023
most citedNWChem: Past, Present, and Future

699 citations · 1.2k across the 23 of their papers we have counts for

collaborators

23 papers

cond-mat.mtrl-sci2023

Ab initio study of the structure and properties of amorphous silicon hydride from accelerated molecular dynamics simulations

Raymond Atta-Fynn, Somilkumar J. Rathi, Harsh Arya +1

This paper presents a large-scale simulation study of amorphous silicon hydride (-SiH) with an emphasis on the structure and properties…

cond-mat.mtrl-sci2023★ 1 cited

Ab initio studies of the impact of the Debye-Waller factor on the structural and dynamical properties of amorphous semiconductors: The case of -Si

Devilal Dahal, Raymond Atta-Fynn, Stephen R. Elliott +1

This paper presents a first-principles study of the Debye-Waller factor and the Debye temperature for amorphous silicon (-Si) from lattice-dynamical calculations and direct mole…

physics.chem-ph2020★ 699 cited

NWChem: Past, Present, and Future

E. Aprà, E. J. Bylaska, W. A. de Jong +111

Specialized computational chemistry packages have permanently reshaped the landscape of chemical and materials science by providing tools to support and guide experimental efforts…

cond-mat.dis-nn2019

Disorder by design: A data-driven approach to amorphous semiconductors without total-energy functionals

Dil K. Limbu, Stephen R. Elliott, Raymond Atta-Fynn +1

This paper addresses a difficult inverse problem that involves the reconstruction of a three-dimensional model of tetrahedral amorphous semiconductors via inversion of diffraction…

cond-mat.mtrl-sci2019

Temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon: A first-principles study

Parthapratim Biswas, Durga Paudel, Raymond Atta-Fynn +1

The paper presents an study of temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon. By using large -Si models, obtained from c…

cond-mat.dis-nn2019

Atomistic simulation of nearly defect-free models of amorphous silicon: An information-based approach

Dil K. Limbu, Raymond Atta-Fynn, Parthapratim Biswas

We present an information-based total-energy optimization method to produce nearly defect-free structural models of amorphous silicon. Using geometrical, structural and topological…