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Deep sub micron normally off AlGaN/GaN MOSFET on silicon with VTH > 5V and On Current > 0.5 A/mm
Sandeep Kumar, Sandeep Vura, Surani B. Dolmanan +3
We report on the demonstration of a deep sub-micron normally-off AlGaN/GaN HEMT with high on-current and high threshold voltage (VTH). The high-performance device was realized by u…
Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs
Sandeep Kumar, Surani B. Dolmanan, Sudhiranjan Tripathy +2
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the ga…
Investigation of Ta2O5 as an alternative high \k{appa} dielectric for InAlN/GaN MOS HEMT on Si
Sandeep Kumar, Himanshu Kumar, Sandeep Vura +6
We report on the demonstration and investigation of Ta2O5 as high-\k{appa} dielectric for InAlN/GaN-MOS HEMT-on-Si. Ta2O5 of thickness 24 nm and dielectric constant ~ 30 was sputte…