most citedAn Early In-Situ Stress Signature of the AlN-Si Pre-growth Interface for Successful Integration of Nitrides with (111) Si

26 citations · 26 across the 1 of their papers we have counts for

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cond-mat.mtrl-sci2017★ 26 cited

An Early In-Situ Stress Signature of the AlN-Si Pre-growth Interface for Successful Integration of Nitrides with (111) Si

Hareesh Chandrasekar, Nagaboopathy Mohan, Abheek Bardhan +4

The integration of MOCVD grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface tha…